- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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65
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | ISOTOP-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 88 A | 24 mOhms | 3 V | 204 nC | Enhancement | |||
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50
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh M5 Power MO... | 25 V | SMD/SMT | ISOTOP-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 130 A | 14 mOhms | 3 V | 363 nC | Enhancement |
