- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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14,998
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | |||
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13,771
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | |||
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11,038
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | |||
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GET PRICE |
282,900
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V Enh FET 12Vgss -15A 1.4W | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 123 mOhms | - 1.25 V | 7.3 nC | Enhancement | ||
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3,628
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement |
