- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,577
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 100 mA | 6 Ohms | ||||||
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7,771
In-stock
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onsemi | MOSFET NCH 1.5V DRIVE SERIES | 10 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 mA | 2.9 Ohms | 1.58 nC | |||||
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4,359
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 70 mA | 18 Ohms | ||||||
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8,481
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIES | 10 V | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 410 mOhms | 1.7 nC | |||||||
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1,980
In-stock
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Toshiba | MOSFET Small-signal MOSFET High Speed Switching | 10 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 100 mA | 1.5 Ohms | 600 mV | Enhancement |
