- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,569
In-stock
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Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.1 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 4 V | 160 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 160 nC | ||||||||
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VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 4 V | 160 nC | Enhancement |
