- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
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- Vds - Drain-Source Breakdown Voltage :
-
- - 100 V (12)
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- Id - Continuous Drain Current :
-
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- Rds On - Drain-Source Resistance :
-
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- Vgs th - Gate-Source Threshold Voltage :
-
- - (4)
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- Applied Filters :
696 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
90
In-stock
|
IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
|
|
555
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | |||
|
|
3,499
In-stock
|
IXYS | MOSFET 3 Amps 1200V 4.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 3 A | 4.5 Ohms | Enhancement | ||||||
|
|
2,483
In-stock
|
IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | - 4 V | 103 nC | Enhancement | PolarP | |||
|
|
738
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 210 A | 14.5 mOhms | 5 V | 268 nC | Enhancement | Polar3, HiperFET | |||
|
|
381
In-stock
|
IXYS | MOSFET 4500V 1A HV Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 1 A | 80 Ohms | 3.5 V to 6 V | 40 nC | Enhancement | ||||
|
|
2,033
In-stock
|
IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | Through Hole | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 16 A | 73 mOhms | 208 nC | Depletion | |||||
|
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368
In-stock
|
IXYS | MOSFET HiperFET Pwr MOSFET 70V, 340A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 340 A | 4 mOhms | 4 V | 490 nC | Enhancement | HyperFET | |||
|
|
402
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
|
|
2,073
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | PolarP | |||
|
|
1,000
In-stock
|
IXYS | MOSFET SMD N-CHANNEL POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 200 mA | 450 Ohms | 4.5 V | 7.4 nC | Enhancement | ||||
|
|
VIEW | IXYS | MOSFET 360 Amps 100V | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 29 A | 2.6 mOhms | 4.5 V | 145 nC | Enhancement | ||||
|
|
95
In-stock
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 4.5 V | 540 nC | Enhancement | Linear L2 | |||
|
|
420
In-stock
|
IXYS | MOSFET -170.0 Amps -100V 0.012 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 170 A | 12 mOhms | |||||||
|
|
76
In-stock
|
IXYS | MOSFET 4500V 2A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 2 A | 23 Ohms | 3.5 V to 5.5 V | 156 nC | Enhancement | ||||
|
|
494
In-stock
|
IXYS | MOSFET -10 Amps -600V 1 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 10 A | 1 Ohms | Enhancement | ||||||
|
|
6,610
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
|
|
14,500
In-stock
|
IXYS | MOSFET 4500V 200mA HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 200 mA | 750 Ohms | 4 V to 6.5 V | 10.4 nC | Enhancement | ||||
|
|
137
In-stock
|
IXYS | MOSFET 230A 200V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 230 A | 7.5 mOhms | |||||||
|
|
130
In-stock
|
IXYS | MOSFET Linear L2 Pwr MOSFET w/Extended FBSOA | 20 V | Chassis Mount | SOT-227-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 178 A | 11 mOhms | ||||||||
|
|
1,088
In-stock
|
IXYS | MOSFET 140 Amps 300V 0.024 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
|
|
305
In-stock
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | ||||
|
|
590
In-stock
|
IXYS | MOSFET LinearL2 Powr MOSFET w/extended FBSOA | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | |||||||
|
|
234
In-stock
|
IXYS | MOSFET 180 Amps 150V 0.011 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 11 mOhms | Enhancement | HyperFET | |||||
|
|
867
In-stock
|
IXYS | MOSFET -90.0 Amps -100V 25 mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 90 A | 25 mOhms | |||||||
|
|
165
In-stock
|
IXYS | MOSFET 4500V 0.9A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 900 mA | 95 Ohms | 3.5 V to 6 V | 40 nC | Enhancement | ||||
|
|
89
In-stock
|
IXYS | MOSFET 4500V 200mA HV Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 200 mA | 750 Ohms | 4 V to 6.5 V | 10.4 nC | Enhancement | ||||
|
|
671
In-stock
|
IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
|
|
213
In-stock
|
IXYS | MOSFET High Voltage Power MOSFET; 2500V, 0.2A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 2500 V | 200 mA | 450 Ohms | 4.5 V | 7.4 nC | Enhancement | ||||||
|
|
472
In-stock
|
IXYS | MOSFET 155A 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 155 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS |
