- Manufacture :
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- Rds On - Drain-Source Resistance :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,265
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 4 V | 42 nC | Enhancement | ||||
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3,786
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 42W 1230pF 36A 100V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 13 mOhms | 4 V | 19 nC | Enhancement |