- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,643
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 22 nC | Enhancement | OptiMOS | |||
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3,117
In-stock
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Fairchild Semiconductor | MOSFET 80V N ch Dual Cool Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 36 A | 1.06 mOhms | 3.1 V | 195 nC | Enhancement | PowerTrench | |||
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3,234
In-stock
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Fairchild Semiconductor | MOSFET 40V/20V NCh PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 36 A | 1.1 mOhms | PowerTrench | ||||||
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2,517
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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4,168
In-stock
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IR / Infineon | MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | ||||||||
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2,988
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 36A 16mOhm 59.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 16 mOhms | 59.3 nC | ||||||||
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3,200
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | |||||
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473
In-stock
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Infineon Technologies | MOSFET N-Ch 49V 36A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 49 V | 36 A | 6.5 mOhms | 1.6 V | 155 nC | Enhancement | ||||
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1,265
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 4 V | 42 nC | Enhancement | ||||
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520
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | ||||||
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2,214
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 36A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 34 V | 36 A | 12 mOhms | 6.1 nC | OptiMOS | |||||
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95
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 36 A | 110 mOhms | 2.5 V | 30 nC | Enhancement | HyperFET | ||||
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28
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 900 V | 36 A | 100 mOhms | 3 V | 252 nC | Enhancement | |||||
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3,000
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | ||||||
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1,738
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | ||||||||
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VIEW | IXYS | MOSFET 1KV 36A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 36 A | 240 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET PHASE LEG MOSFET MOD H-BRIDGE -150V -22A | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 150 V | 36 A | 110 mOhms | 5.5 V, - 4.5 V | 70 nC, 55 nC | Polar | ||||
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3,786
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 42W 1230pF 36A 100V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 13 mOhms | 4 V | 19 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 600V 36A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 180 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 600V 36A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 180 mOhms | Enhancement | HyperFET | |||||
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1
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement |
