- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,988
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 36A 16mOhm 59.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 16 mOhms | 59.3 nC | ||||||||
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3,200
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | |||||
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520
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | ||||||
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95
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 36 A | 110 mOhms | 2.5 V | 30 nC | Enhancement | HyperFET | ||||
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28
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 900 V | 36 A | 100 mOhms | 3 V | 252 nC | Enhancement | |||||
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1,738
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | ||||||||
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VIEW | IXYS | MOSFET PHASE LEG MOSFET MOD H-BRIDGE -150V -22A | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 150 V | 36 A | 110 mOhms | 5.5 V, - 4.5 V | 70 nC, 55 nC | Polar | ||||
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VIEW | IXYS | MOSFET 600V 36A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 180 mOhms | Enhancement | HyperFET |
