- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
31 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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29,580
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 47.3 nC | |||||||||
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7,959
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 36 mOhms | 3 V | 12 nC | Enhancement | OptiMOS | ||||
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1,607
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 4 V | 47.3 nC | Enhancement | |||||
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1,049
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerMOSFET UltraFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 40 mOhms | Enhancement | |||||||
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21,370
In-stock
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IR / Infineon | MOSFET MOSFT 150V 33A 42mOhm 26nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 34 mOhms | 26 nC | |||||||||
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235
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||||
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GET PRICE |
17,550
In-stock
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IR / Infineon | MOSFET MOSFT 150V 33A 42mOhm 26nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 34.5 mOhms | 26 nC | ||||||||
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3,399
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 4 V | 29 nC | Enhancement | |||||
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14,400
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 47.3 nC | |||||||||
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858
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 42mOhms 26nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 34 mOhms | 26 nC | |||||||||
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GET PRICE |
4,235
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 27A 52mOhm 62.7nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | 4 V | 94 nC | |||||
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579
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 2 V to 4 V | 47.3 nC | Enhancement | |||||
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71,500
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | 20 V | Through Hole | TO-220 | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 47.3 nC | |||||||||
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738
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 33A 42mOhm 26nC | 20 V | Through Hole | TO-251-3 | Tube | Si | N-Channel | 150 V | 33 A | 34 mOhms | 26 nC | ||||||||||
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2,360
In-stock
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onsemi | MOSFET POWER MOSFET 40V | 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 33 A | 12.7 mOhms | |||||||||
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14
In-stock
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IR / Infineon | MOSFET Audio MOSFT 150V 33A 42mOhm 26nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 34.5 mOhms | 26 nC | |||||||||
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6,695
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 145A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 145A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 5 V | 26 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||||
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4,872
In-stock
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Toshiba | MOSFET N-Ch 60V 1000pF 15nC 13.9mOhm 33A 30W | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 33 A | 11 mOhms | 2 V to 4 V | 15 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 33 A | 24 mOhms | 2 V | 22 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 33 Amps 500V 0.17 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 33 A | 170 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 33 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 33 A | 160 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 33 Amps 1000V 0.24 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 33 A | 240 mOhms | Enhancement | |||||||
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256
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 42mOhms 26nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 3 V to 5 V | 26 nC | Enhancement | |||||
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737
In-stock
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IR / Infineon | MOSFET MOSFT 30V 33A 31mOhm 29nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 19.3 nC | Enhancement | ||||||
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167
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 2 V to 4 V | 19.3 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 5 V | 26 nC | Enhancement |