- Manufacture :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,607
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 4 V | 47.3 nC | Enhancement | ||||
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1,049
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerMOSFET UltraFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 40 mOhms | Enhancement | ||||||
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14,400
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 47.3 nC | ||||||||
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579
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 2 V to 4 V | 47.3 nC | Enhancement | ||||
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6,695
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 145A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 145A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS |
