- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,490
In-stock
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onsemi | MOSFET NFET 40V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 69 A | 5.7 mOhms | 2 V | 45 nC | Enhancement | |||||
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15,300
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.7 mOhms | 2 V | 68 nC | Enhancement | |||||
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4,791
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 5.7 mOhms | 2 V | 15 nC | NexFET | |||||
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796
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.7 mOhms | 2 V | 15 nC | Enhancement | NexFET | ||||
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2,118
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 5.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 5.7 mOhms | 2 V | 56 nC | Enhancement | |||||
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516
In-stock
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onsemi | MOSFET NCH 100A 100V TO-263 | 20 V | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 5.7 mOhms | 2 V | 35 nC | Enhancement |