- Mounting Style :
- Maximum Operating Temperature :
- Tradename :
23 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
10,071
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 94 A | 5.7 mOhms | Enhancement | PowerTrench | ||||||
|
5,370
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 5.7 mOhms | 41 nC | Enhancement | ||||||
|
5,000
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 5.7 mOhms | Enhancement | PowerTrench | ||||||
|
GET PRICE |
12,221
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 5.7 mOhms | 2.2 V | 43 nC | Enhancement | ||||
|
3,274
In-stock
|
Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.4mOhms 22nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 20 A | 5.7 mOhms | 22 nC | Enhancement | ||||||
|
7,178
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 93 A | 5.7 mOhms | 1.55 V to 2.45 V | 18 nC | Enhancement | |||||
|
1,211
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 93 A | 5.7 mOhms | Enhancement | PowerTrench | ||||||
|
2,160
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17 A | 5.7 mOhms | Enhancement | PowerTrench | ||||||
|
1,311
In-stock
|
Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 120 A | 5.7 mOhms | 1.55 V to 2.45 V | 21 nC | Enhancement | |||||
|
329
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 60 A | 5.7 mOhms | 18 nC | Enhancement | OptiMOS | |||||
|
1,490
In-stock
|
onsemi | MOSFET NFET 40V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 69 A | 5.7 mOhms | 2 V | 45 nC | Enhancement | |||||
|
365
In-stock
|
onsemi | MOSFET 60V T2 TO220 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 98 A | 5.7 mOhms | 4 V | 82 nC | ||||||
|
15,300
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.7 mOhms | 2 V | 68 nC | Enhancement | |||||
|
4,791
In-stock
|
Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 5.7 mOhms | 2 V | 15 nC | NexFET | |||||
|
796
In-stock
|
Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.7 mOhms | 2 V | 15 nC | Enhancement | NexFET | ||||
|
2,659
In-stock
|
onsemi | MOSFET NFET DPAK 60V 102A 6MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 98 A | 5.7 mOhms | 82 nC | |||||||
|
2,500
In-stock
|
onsemi | MOSFET NFET DPAK 40V 85A 5.7 MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 5.7 mOhms | 3.5 V | 51 nC | ||||||
|
VIEW | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 120 A | 5.7 mOhms | 21 nC | |||||||||
|
2,118
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 5.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | ||||
|
398
In-stock
|
Fairchild Semiconductor | MOSFET 25V 40A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 20 A | 5.7 mOhms | Enhancement | PowerTrench | ||||||
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 5.7 mOhms | 2 V | 56 nC | Enhancement | |||||
|
516
In-stock
|
onsemi | MOSFET NCH 100A 100V TO-263 | 20 V | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 5.7 mOhms | 2 V | 35 nC | Enhancement | ||||||
|
55
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 5.7 mOhms | 1.8 V | 13 nC | Enhancement |