- Package / Case :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,370
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Fairchild Semiconductor | MOSFET 30V N-Ch Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 5.7 mOhms | 41 nC | Enhancement | |||||
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5,000
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 5.7 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
12,221
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 5.7 mOhms | 2.2 V | 43 nC | Enhancement | |||
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3,274
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.4mOhms 22nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 20 A | 5.7 mOhms | 22 nC | Enhancement | |||||
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4,791
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 5.7 mOhms | 2 V | 15 nC | NexFET | ||||
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796
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.7 mOhms | 2 V | 15 nC | Enhancement | NexFET | |||
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55
In-stock
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IR / Infineon | MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 5.7 mOhms | 1.8 V | 13 nC | Enhancement |