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16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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67,313
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
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45,596
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 49 A | 7.8 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS | |||
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5,626
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 49 A | 7.8 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS | |||
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3,506
In-stock
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onsemi | MOSFET 30V 68A N-Channel | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 68 A | 7.8 mOhms | Enhancement | ||||||
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918
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 100A 7.8mOhm 160nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 7.8 mOhms | 160 nC | ||||||||
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1,944
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
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4,000
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh Mode 22Vgss 2090pF 41.3nC | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 7.8 mOhms | 2 V | 41.3 nC | Enhancement | ||||
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201
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 87 A | 7.8 mOhms | 17 nC | ||||||||
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145
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 87 A | 7.8 mOhms | 36 nC | Enhancement | ||||||
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GET PRICE |
17,600
In-stock
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Texas instruments | MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 7.8 mOhms | 2.2 V | 35 nC | Enhancement | |||
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530
In-stock
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Texas instruments | MOSFET 60V,N-Ch NexFET Pwr MOSFET | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.5 V | 22 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 87 A | 7.8 mOhms | 17 nC | ||||||||
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189
In-stock
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Toshiba | MOSFET N-Ch 88A 140W FET 120V 3100pF 52nC | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 120 V | 88 A | 7.8 mOhms | 2 V to 4 V | 52 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 42 A | 7.8 mOhms | 2 V to 4 V | 52 nC | Enhancement | ||||
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799
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 7.8mOhms 160nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 7.8 mOhms | 160 nC | ||||||||
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517
In-stock
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IR / Infineon | MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 93 A | 7.8 mOhms | 18 nC |
