MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	BSC093N04LS G	1+ $0.680 10+ $0.558 100+ $0.360 1000+ $0.288 5000+ $0.244		PDF RFQ	45,596 In-stock	Infineon Technologies	MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	40 V	49 A	7.8 mOhms	1.2 V	24 nC	Enhancement	OptiMOS
	BSC093N04LSGATMA1	1+ $0.680 10+ $0.558 100+ $0.360 1000+ $0.288 5000+ $0.244		PDF RFQ	5,626 In-stock	Infineon Technologies	MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	40 V	49 A	7.8 mOhms	1.2 V	24 nC	Enhancement	OptiMOS
	AUIRF3504	1+ $1.850 10+ $1.570 100+ $1.260 500+ $1.100		PDF RFQ	145 In-stock	IR / Infineon	MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms	20 V	Through Hole	TO-220-3	- 55 C		Tube	1 Channel	Si	N-Channel	40 V	87 A	7.8 mOhms		36 nC	Enhancement

BSC093N04LS G

BSC093N04LS G

Infineon Technologies

MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3

Stock : 45,596

1+: $0.680

10+: $0.558

100+: $0.360

1000+: $0.288

5000+: $0.244

BSC093N04LSGATMA1

BSC093N04LSGATMA1

Infineon Technologies

MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3

Stock : 5,626

1+: $0.680

10+: $0.558

100+: $0.360

1000+: $0.288

5000+: $0.244

AUIRF3504

AUIRF3504

IR / Infineon

MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms

Stock : 145

1+: $1.850

10+: $1.570

100+: $1.260

500+: $1.100

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