- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Tradename :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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675
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 700 mOhms | 1 V | 227 nC | Enhancement | OptiMOS | ||||
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492
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6.6A TO220FP CoolMOS CFD | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.6 A | 700 mOhms | Enhancement | CoolMOS | ||||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 1KV 15A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 700 mOhms | 1 V | 227 nC | Enhancement | OptiMOS | ||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 14 Amps 800V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.7 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 13 Amps 800V 0.8 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 14 Amps 800V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 700 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 13 Amps 800V 0.8 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 700 mOhms | Enhancement | HyperFET |