- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,173
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | |||
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703
In-stock
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Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 96 A | 7.35 mOhms | 4 V | 31 nC | |||||||
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913
In-stock
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Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 40 A | 6.5 mOhms | 4 V | 31 nC | PowerTrench | ||||||
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1,960
In-stock
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IR / Infineon | MOSFET 55V SINGLE N-CH 13.6mOhms 31nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.6 mOhms | 4 V | 31 nC | Enhancement |
