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19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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90
In-stock
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IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
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7,873
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 3.5 mOhms | 2 V | 200 nC | Enhancement | ||||
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4,703
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 160 A | 1.8 mOhms | 200 nC | Enhancement | Directfet | ||||
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1,919
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | ||||
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307
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 34.6 A | 81 mOhms | 2.1 V | 200 nC | Enhancement | CoolMOS | |||
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2,457
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.1 mOhms | 200 nC | Enhancement | Directfet | ||||
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436
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 4 V | 200 nC | |||||
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1,076
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | ||||
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698
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.5mOhms 200nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 200 nC | ||||||||
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346
In-stock
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IR / Infineon | MOSFET 100V N-CH 142A 3.5 mOhm 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 2 V | 200 nC | Enhancement | Directfet | |||
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89
In-stock
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IR / Infineon | MOSFET MOSFT 60V 270A 2.5mOhm 200nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 4 V | 200 nC | |||||
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669
In-stock
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IR / Infineon | MOSFET MOSFET N CH 60V 240A D2PAK | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 1.6 mOhms | 3.7 V | 200 nC | StrongIRFET | ||||
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301
In-stock
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IR / Infineon | MOSFET MOSFT 60V 270A 2.5mOhm 200nC Qg | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 60 V | 270 A | 2.1 mOhms | 200 nC | |||||||||
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89
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 34.6 A | 81 mOhms | 2.1 V | 200 nC | Enhancement | CoolMOS | |||
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41
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | 200 nC | Depletion | |||||
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530
In-stock
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IR / Infineon | MOSFET MOSFT 60V 293A 2.1mOhm 200nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 200 nC | Enhancement | ||||||
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4,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET L8 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 200 nC | Enhancement | Directfet | ||||
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399
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 270A 2.5mOhm 200nCAB | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 60 V | 270 A | 2.1 mOhms | 200 nC | |||||||||
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506
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 270A 2.5mOhm 200nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 200 nC |
