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- Mounting Style :
- Package / Case :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,919
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | ||||
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1,076
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | ||||
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698
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.5mOhms 200nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 200 nC | ||||||||
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89
In-stock
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IR / Infineon | MOSFET MOSFT 60V 270A 2.5mOhm 200nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 4 V | 200 nC | |||||
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506
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 270A 2.5mOhm 200nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 200 nC |