- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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11,993
In-stock
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Siliconix / Vishay | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.6 A | 0.068 Ohms | - 2.5 V | 16 nC | Enhancement | |||
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2,000
In-stock
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Vishay Semiconductors | MOSFET 150V Vds 42A Id 10.5nC Qg Typ. | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 150 V | 42 A | 0.0372 Ohms | 2 V | 16 nC | Enhancement | ||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 40V LL U8FL WF | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 51 A | 6.1 mOhms | 1.2 V | 16 nC | Enhancement | |||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 40V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 51 A | 6.1 mOhms | 1.2 V | 16 nC | Enhancement |
