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Manufacture :
Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFN32N120P
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RFQ
42
In-stock
IXYS MOSFET 32 Amps 1200V 30 V Chassis Mount SOT-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 1200 V 32 A 310 mOhms 6.5 V 360 nC Enhancement Polar, HiPerFET
TK100L60W,VQ
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RFQ
220
In-stock
Toshiba MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF 30 V Through Hole TO-3PL-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 100 A 15 mOhms 2.7 V to 3.7 V 360 nC   DTMOSIV
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