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- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,118
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 6.8A 35mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | |||
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4,180
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8 | 12 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 14 nC | ||||||
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1,212
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 22 A | 11.7 mOhms | 0.5 V to 1.1 V | 14 nC | Enhancement | ||
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13
In-stock
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IR / Infineon | MOSFET MOSFT 20V 8.5A 11.7mOhm 2.5V cpbl | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 11.7 mOhms | 14 nC | Enhancement | |||
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73
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | Enhancement | ||
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GET PRICE |
114
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | Micro-8 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 0.7 V | 14 nC | Enhancement |
