- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
43 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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912
In-stock
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Fairchild Semiconductor | MOSFET 500V 16A NCH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 380 mOhms | Enhancement | |||||||
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568
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2, 380mohm | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | SuperFET II | ||||||||
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614
In-stock
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Fairchild Semiconductor | MOSFET 600V NCH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | SuperFET FRFET | ||||||
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779
In-stock
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Fairchild Semiconductor | MOSFET 600V NCH MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | SuperFET FRFET | ||||||
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443
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CH QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18.5 A | 380 mOhms | Enhancement | QFET | ||||||
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492
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 14 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 380 mOhms | 69 nC | Enhancement | ||||||
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600
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 17 nC | Enhancement | |||||
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761
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 380 mOhms | 3 V | 15 nC | Enhancement | |||||
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5,210
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | |||||
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749
In-stock
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Fairchild Semiconductor | MOSFET 500V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 380 mOhms | Enhancement | |||||||
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257
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 380 mohm 650V FRFET | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | 5 V | 33 nC | SuperFET II FRFET | |||||
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237
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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8,000
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2, 380mohm | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | Enhancement | SuperFET II | |||||||
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331
In-stock
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Fairchild Semiconductor | MOSFET 500V 16.5A NCH | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16.5 A | 380 mOhms | Enhancement | UniFET | ||||||
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617
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
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147
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | |||||
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370
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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103
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.32Ohm 11A FDMesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 4 V | 24.5 nC | ||||||
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340
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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305
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 11.6A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.6 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 380 mOhms | 39 nC | CoolMOS | ||||||
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30,000
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.32Ohm 11A FDMesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 4 V | 24.5 nC | ||||||
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363
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 11.6A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.6 A | 380 mOhms | 3 V | 49 nC | CoolMOS | |||||
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185
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 12 A | 380 mOhms | 3 V | 33.3 nC | Enhancement | ||||||
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38
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
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400
In-stock
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Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | |||||||
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400
In-stock
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Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W | 20 V | Through Hole | TO-220SIS-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | |||||||
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23
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 35 A | 380 mOhms | 4 V | 305 nC | Enhancement | |||||||
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12
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 32 A | 380 mOhms | 4 V | 260 nC | Enhancement | ||||||
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97
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement |