- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
600
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 17 nC | Enhancement | |||||
|
761
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 380 mOhms | 3 V | 15 nC | Enhancement | |||||
|
5,210
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | |||||
|
617
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
|
147
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | |||||
|
363
In-stock
|
Infineon Technologies | MOSFET N-Ch 560V 11.6A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.6 A | 380 mOhms | 3 V | 49 nC | CoolMOS | |||||
|
185
In-stock
|
STMicroelectronics | MOSFET N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 12 A | 380 mOhms | 3 V | 33.3 nC | Enhancement | ||||||
|
38
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
|
400
In-stock
|
Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | |||||||
|
400
In-stock
|
Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W | 20 V | Through Hole | TO-220SIS-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | |||||||
|
VIEW | STMicroelectronics | MOSFET N-CH 650V 0.35Ohm 12A MDmesh II | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 380 mOhms | 3 V | 33.3 nC | ||||||
|
VIEW | STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 500V 9.9A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 9.9 A | 380 mOhms | 3 V | 24.8 nC | CoolMOS |