PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
IPD30N03S2L-20	1+ $0.620 10+ $0.511 100+ $0.330 1000+ $0.264 2500+ $0.223	PDF RFQ	2,440 In-stock	Infineon Technologies	MOSFET N-Ch 30V 30A DPAK-2 OptiMOS	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	30 V	30 A	14.5 mOhms	1.2 V	19 nC	Enhancement	OptiMOS
IPD30N03S2L20ATMA1	1+ $0.620 10+ $0.511 100+ $0.330 1000+ $0.264 2500+ $0.223	PDF RFQ	2,500 In-stock	Infineon Technologies	MOSFET N-Ch 30V 30A DPAK-2 OptiMOS	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	30 V	30 A	14.5 mOhms	1.2 V	19 nC	Enhancement
STD90NS3LLH7	1+ $1.100 10+ $0.938 100+ $0.721 500+ $0.637	PDF RFQ	2,500 In-stock	STMicroelectronics	MOSFET N-channel 30 V, 2.8 mOhm typ., 80 A STripFET H7 Power M...	+/- 20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	30 V	80 A	2.8 mOhms	1.2 V	13.7 nC	Enhancement	STripFET
SPD30N03S2L-10 G	1+ $1.010 10+ $0.817 100+ $0.627 500+ $0.554 2500+ $0.388	PDF RFQ	2,180 In-stock	Infineon Technologies	MOSFET N-Ch 30V 30A DPAK-2	+/- 20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	30 V	30 A	7.8 mOhms	1.2 V	41.8 nC	Enhancement	OptiMOS