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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Nexperia | MOSFET Trench Mosfet 20V, P-channel | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 500 mA | 1.02 Ohms | - 0.7 V | 1.19 nC | Enhancement |
