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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXFH120N15P
1+
$6.400
10+
$5.790
25+
$5.520
100+
$4.790
RFQ
120
In-stock
IXYS MOSFET 120 Amps 150V 0.016 Rds 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 120 A 16 mOhms Enhancement HyperFET
IXFX200N10P
1+
$10.920
10+
$10.040
25+
$9.630
100+
$8.480
RFQ
20
In-stock
IXYS MOSFET 200 Amps 100V 0.0075 Rds 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 200 A 7.5 mOhms Enhancement HyperFET
IXFX180N15P
1+
$10.520
10+
$9.670
25+
$9.270
100+
$8.170
RFQ
30
In-stock
IXYS MOSFET 180 Amps 150V 0.011 Ohm Rds 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 180 A 11 mOhms Enhancement HyperFET
IXFH96N15P
1+
$5.560
10+
$4.730
100+
$4.100
250+
$3.890
RFQ
40
In-stock
IXYS MOSFET 96 Amps 150V 0.024 Rds 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 96 A 24 mOhms Enhancement HyperFET
IXFH76N07-11
90+
$8.000
120+
$6.950
270+
$6.640
510+
$6.050
VIEW
RFQ
IXYS MOSFET 70V 76A 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 70 V 76 A 11 mOhms Enhancement HyperFET
IXFH76N07-12
90+
$7.610
120+
$6.610
270+
$6.310
510+
$5.760
VIEW
RFQ
IXYS MOSFET 70V 76A 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 70 V 76 A 12 mOhms Enhancement HyperFET
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