- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 7.5 mOhms (3)
- 75 mOhms (2)
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- 8.5 mOhms (1)
- 9 mOhms (5)
- 9.7 mOhms (1)
- Qg - Gate Charge :
-
- 107 nC (1)
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- Tradename :
-
- GigaMOS, HiperFET (1)
- HiPerFET (4)
- HyperFET (6)
- Polar (1)
- Polar, HiPerFET (2)
- PolarHT (1)
- PolarHT, HiPerFET (7)
- PolarHT, ISOPLUS247, HiPerFET (1)
- PolarHV, HiPerFET (1)
- PolarHV, ISOPLUS247, HiPerFET (1)
- PowerTrench (3)
- STripFET (1)
- StrongIRFET (3)
- TrenchT2 (1)
- TrenchT2, GigaMOS, HiperFET (1)
- TrenchT2, HiperFET (2)
- TrenchT4 (2)
- UltraFET (6)
- Applied Filters :
86 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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81
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
|
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2,193
In-stock
|
Fairchild Semiconductor | MOSFET 75a 55V NCh UltraFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 8 mOhms | Enhancement | UltraFET | |||||
|
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23,630
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 49A 40mOhm 156nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | 156 nC | Enhancement | |||||
|
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1,704
In-stock
|
Fairchild Semiconductor | MOSFET Trans MOS N-Ch 55V 75A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | UltraFET | |||||
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711
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.7 mOhms | Enhancement | PowerTrench | |||||
|
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14,020
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | |||||
|
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GET PRICE |
4,485
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | ||||
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583
In-stock
|
Fairchild Semiconductor | MOSFET 75a 100VN-Ch MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 8 mOhms | Enhancement | UltraFET | |||||
|
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7,220
In-stock
|
Fairchild Semiconductor | MOSFET Single N-Ch 500V .12Ohm SMPS | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 120 mOhms | Enhancement | ||||||
|
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502
In-stock
|
IXYS | MOSFET 230A 200V | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 230 A | 7.5 mOhms | Enhancement | ||||||
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756
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | ||||
|
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1,868
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
|
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8,520
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 9 mOhms | Enhancement | ||||||
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654
In-stock
|
IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
|
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2,247
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 16 mOhms | 4 V | 89 nC | Enhancement | ||||
|
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956
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
|
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8,340
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 82 nC | Enhancement | |||||
|
|
GET PRICE |
51,300
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 94A 23mOhm 180nCAC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 94 A | 23 mOhms | 180 nC | Enhancement | ||||
|
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3,290
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 209 A | 4.5 mOhms | 410 nC | Enhancement | |||||
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490
In-stock
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Fairchild Semiconductor | MOSFET TO-247 / FDH3632 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.5 mOhms | Enhancement | PowerTrench | |||||
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183
In-stock
|
Fairchild Semiconductor | MOSFET 75a 150V 0.016 Ohm N-Ch MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 75 A | 16 mOhms | Enhancement | UltraFET | |||||
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450
In-stock
|
Fairchild Semiconductor | MOSFET N-CHAN UltraFET Pwr 75A 150V 0.016Ohm | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 75 A | 16 mOhms | ||||||||
|
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5,290
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | |||||
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692
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
|
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147
In-stock
|
IXYS | MOSFET N-CH 100V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6 A | 64 mOhms | 22 nC | ||||||
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256
In-stock
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 1.8 mOhms | 3.7 V | 830 nC | Enhancement | StrongIRFET | |||
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150
In-stock
|
IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||||
|
|
211
In-stock
|
IXYS | MOSFET 175V 150A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 175 V | 150 A | 12 mOhms | 2.5 V to 4.5 V | 63 nC | Enhancement | ||||
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327
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 188 nC | Enhancement | ||||
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|
500
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 172A TO247 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 172 A | 2.75 mOhms | 3.7 V | 142 nC | StrongIRFET |
