- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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13,174
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | ||||
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1,296
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 900 mOhms | 3 V | 12 nC |