- Vgs - Gate-Source Voltage :
- Mounting Style :
- Rds On - Drain-Source Resistance :
-
- 0.13 Ohms (1)
- 0.145 Ohms (1)
- 0.305 Ohms (1)
- 0.49 Ohms (1)
- 1.06 Ohms (2)
- 1.26 Ohms (2)
- 100 mOhms (1)
- 108 mOhms (2)
- 110 mOhms (1)
- 120 mOhms (3)
- 155 mOhms (1)
- 165 mOhms (1)
- 165 Ohms (1)
- 168 mOhms (1)
- 175 mOhms (1)
- 180 mOhms (1)
- 190 mOhms (1)
- 255 mOhms (2)
- 370 mOhms (1)
- 380 mOhms (1)
- 560 mOhms (2)
- 650 mOhms (1)
- 750 mOhms (1)
- 85 mOhms (1)
- 850 mOhms (1)
- 860 mOhms (2)
- 900 mOhms (1)
- 980 mOhms (1)
36 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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|
908
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | ||||||
|
13,174
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | ||||||
|
11,151
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | 3 V | 87 nC | CoolMOS | |||||
|
7,880
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V 20 A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 165 mOhms | 3 V | 60 nC | ||||||
|
930
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | ||||||
|
2,669
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.06 Ohms | 3 V | 8 nC | ||||||
|
1,286
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 18A Mdmesh M2 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | |||||||
|
848
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 22 A | 0.13 Ohms | 3 V | 39 nC | Enhancement | ||||||
|
9,890
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 255 mOhms | 3 V | 21.5 nC | ||||||
|
480
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | ||||||
|
707
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 155 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | ||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 255 mOhms | 3 V | 21.5 nC | ||||||
|
12,101
In-stock
|
onsemi | MOSFET NFET TO220FP 600V 6A .98R | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6 A | 980 mOhms | 3 V | 31 nC | |||||||
|
1,296
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | ||||||
|
521
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | ||||||
|
521
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | ||||||
|
427
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 85 mOhms | 3 V | 42 nC | Enhancement | CoolMOS | ||||
|
147
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | |||||
|
75,100
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | ||||||
|
802
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | ||||||
|
430
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 4.5A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 850 mOhms | 3 V | 19 nC | CoolMOS | |||||
|
819
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2 | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 1.26 Ohms | 3 V | 4.5 nC | ||||||||
|
850
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2 | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 1.26 Ohms | 3 V | 4.5 nC | ||||||||
|
96
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 3 V | 54 nC | Enhancement | ||||||
|
983
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.06 Ohms | 3 V | 8 nC | ||||||
|
470
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6 A | 0.49 Ohms | 3 V | 9 nC | Enhancement | CoolMOS | |||||
|
450
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | |||||
|
47,000
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 0.305 Ohms | 3 V | 13 nC | Enhancement | CoolMOS | |||||
|
28
In-stock
|
IXYS | MOSFET 23 Amps 600V 0.1 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 100 mOhms | 3 V | 60 nC | Enhancement | CoolMOS | ||||
|
45
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement |