- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
981
In-stock
|
STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
|
GET PRICE |
1,151
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 7.2 Amp | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 7.2 A | 1.35 Ohms | 34 nC | Enhancement | |||||
|
GET PRICE |
878
In-stock
|
STMicroelectronics | MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 250 mOhms | 3 V | 34 nC | ||||||
|
GET PRICE |
71,700
In-stock
|
onsemi | MOSFET N-CH Power MOSFET 1500V 2.5A | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 10.5 Ohms | 34 nC | |||||||||
|
GET PRICE |
971
In-stock
|
STMicroelectronics | MOSFET N-Ch, 620V-1.1ohms 5.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 1.28 Ohms | 3.75 V | 34 nC | Enhancement | ||||
|
GET PRICE |
177
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 500V | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 250 mOhms | 34 nC | Enhancement | |||||
|
GET PRICE |
100
In-stock
|
STMicroelectronics | MOSFET N-CHANNEL 950 V 1.1 7.2 A TO-220 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 7.2 A | 1.35 Ohms | 34 nC | Enhancement | |||||
|
GET PRICE |
230
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A FDMesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC | |||||
|
GET PRICE |
250
In-stock
|
Toshiba | MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 60 A | 11 mOhms | 2 V to 4 V | 34 nC | Enhancement | ||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 500V 17A TO220-3 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 180 mOhms | 3 V | 34 nC | CoolMOS | ||||||
|
GET PRICE |
790
In-stock
|
STMicroelectronics | MOSFET N-channel 620V 1.1 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 1.28 Ohms | 34 nC | Enhancement | |||||
|
VIEW | STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC | ||||||
|
GET PRICE |
965
In-stock
|
Fairchild Semiconductor | MOSFET 650V, 380mOhm SuperFET II MOSFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10.2 A | 380 mOhms | 3.5 V | 34 nC | Enhancement |