- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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981
In-stock
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STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | ||||
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1,151
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 7.2 Amp | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 7.2 A | 1.35 Ohms | 34 nC | Enhancement | ||||
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971
In-stock
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STMicroelectronics | MOSFET N-Ch, 620V-1.1ohms 5.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 1.28 Ohms | 3.75 V | 34 nC | Enhancement | |||
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100
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 950 V 1.1 7.2 A TO-220 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 7.2 A | 1.35 Ohms | 34 nC | Enhancement | ||||
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790
In-stock
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STMicroelectronics | MOSFET N-channel 620V 1.1 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 1.28 Ohms | 34 nC | Enhancement |
