- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,973
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | ||||||
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1,987
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 49A 17.5mOhm 42nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | ||||||||
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815
In-stock
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STMicroelectronics | MOSFET N-Ch, 55V-0.005ohms 80A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 6.5 mOhms | Enhancement | ||||||
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450
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 190 nC | Enhancement | ||||||
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312
In-stock
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IR / Infineon | MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl | 16 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | ||||||||
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679
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | 3 V | 24 nC | |||||
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384
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | ||||||
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540
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | Enhancement | ||||||
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20
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 51A 13.9mOhm 29nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | ||||||||
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91
In-stock
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IR / Infineon | MOSFET 55V, 53A, 16.5mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | Si | N-Channel | 55 V | 53 A | 16.5 mOhms | 48 nC | |||||||||
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3,200
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | Enhancement | ||||
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946
In-stock
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STMicroelectronics | MOSFET N-Ch, 55V-0.0065ohms 80A | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 8 mOhms | Enhancement | ||||||
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3
In-stock
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IR / Infineon | MOSFET MOSFT 55V 51A 13.5mOhm 24nC LogLvl | 16 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 24 nC |