- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,973
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | ||||||
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440
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 3 V | 120 nC | Enhancement | ||||
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350
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | ||||||||
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392
In-stock
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IR / Infineon | MOSFET MOSFT 100V 127A 6mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||||
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215
In-stock
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Infineon Technologies | MOSFET Auto Q101 -55V P-Ch HEXFET Power MOSFET | 20 V | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC | |||||||
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250
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||||
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386
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||
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800
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -74A 20mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC | ||||||||
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200
In-stock
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Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 382 A | 1.3 mOhms | 120 nC | Enhancement |