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Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N CH 40V 85A PQFN 5X6 8-PowerTDFN HEXFET®, StrongIRFET™ Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 40V 85A (Tc) 3.3 mOhm @ 50A, 10V 3.9V @ 100µA 98nC @ 10V 3174pF @ 25V 6V, 10V ±20V 78W (Tc)
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Infineon Technologies MOSFET N-CH 40V 26A 8PQFN 8-PowerTDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 40V 26A (Ta), 85A (Tc) 3.3 mOhm @ 50A, 10V 2.5V @ 100µA 58nC @ 4.5V 3720pF @ 25V 4.5V, 10V ±16V 3.6W (Ta), 104W (Tc)
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