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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,913
In-stock
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onsemi | MOSFET 20 V SANYO T6 NCH IN | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.6 A | 18 mOhms | 450 mV | 17.8 nC | Enhancement | ||
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1,774
In-stock
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Nexperia | MOSFET PMV28UNEA/TO-236AB/REEL 7" Q3/ | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.7 A | 24 mOhms | 450 mV | 10 nC | Enhancement | ||
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GET PRICE |
236,500
In-stock
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Nexperia | MOSFET PMV65UNE/TO-236AB/REEL 7 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.4 A | 63 mOhms | 450 mV | 6 nC | Enhancement |
