- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.022 Ohms (1)
- 0.024 Ohms (1)
- 10.2 mOhms (1)
- 10.4 mOhms (1)
- 11.3 mOhms (1)
- 12 mOhms (2)
- 13 mOhms (1)
- 13.5 mOhms (4)
- 14 mOhms (2)
- 15 mOhms (1)
- 155 mOhms (1)
- 18 mOhms (1)
- 2.2 mOhms (1)
- 2.3 mOhms (2)
- 22.5 mOhms (1)
- 269 mOhms (1)
- 27 mOhms (2)
- 35 mOhms (1)
- 36 mOhms (2)
- 450 mOhms (1)
- 5.2 mOhms (1)
- 56 mOhms (1)
- 65 mOhms (2)
- 7.4 mOhms (1)
- 7.5 mOhms (3)
- 7.8 mOhms (2)
- 7.9 mOhms (1)
- 750 mOhms (1)
- 8.1 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
42 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | ||||
|
|
45,596
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 49 A | 7.8 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS | |||
|
|
4,348
In-stock
|
Infineon Technologies | MOSFET 55V DUAL N / P CH 20V VGS 55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | Enhancement | |||||
|
|
2,818
In-stock
|
Fairchild Semiconductor | MOSFET PT5 150V/25V Pch Power Trench Mosfet | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 2.7 A | 269 mOhms | - 4 V | 24 nC | PowerTrench | |||||
|
|
2,214
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Chan Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 40 A | 2.2 mOhms | 2 V | 24 nC | PowerTrench | ||||
|
|
2,282
In-stock
|
Fairchild Semiconductor | MOSFET PT5 100/20V Dual Nch Power Trench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 24 A | 36 mOhms | 3 V | 24 nC | PowerTrench Power Clip | ||||
|
|
5,626
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 49 A | 7.8 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS | |||
|
|
4,132
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 16 A | 0.022 Ohms | 1.5 V | 24 nC | Enhancement | TrenchFET | |||
|
|
2,594
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 74A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 74 A | 10.4 mOhms | 2.2 V | 24 nC | Enhancement | ||||
|
|
3,293
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 61 A | 15 mOhms | 2 V | 24 nC | Enhancement | ||||
|
|
9,935
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 7.5 mOhms | 1 V | 24 nC | Enhancement | OptiMOS | |||
|
|
4,858
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.3 mOhms | 1 V | 24 nC | Enhancement | OptiMOS | |||
|
|
3,533
In-stock
|
IR / Infineon | MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | Enhancement | |||||
|
|
2,496
In-stock
|
Fairchild Semiconductor | MOSFET MV8 40/20V 740A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.9 mOhms | 2 V | 24 nC | Enhancement | PowerTrench | |||
|
|
707
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 155 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | |||
|
|
1,384
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 10.2 mOhms | 2.2 V | 24 nC | Enhancement | ||||
|
|
GET PRICE |
49,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 8.1 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS | ||
|
|
1,223
In-stock
|
Vishay Semiconductors | MOSFET 60V 23A 100W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 23 A | 0.024 Ohms | 1.5 V | 24 nC | Enhancement | TrenchFET | |||
|
|
GET PRICE |
16,970
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 8.1 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS | ||
|
|
1,400
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL NCh 55V 4.7A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V | 4.7 A | 56 mOhms | 1 V | 24 nC | |||||
|
|
1,391
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgss 1.8W | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.8 A | 36 mOhms | - 3 V | 24 nC | Enhancement | ||||
|
|
12,500
In-stock
|
onsemi | MOSFET NFET SO8FL 40V 75A 9.3MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 75 A | 11.3 mOhms | 3 V | 24 nC | |||||
|
|
679
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | 3 V | 24 nC | |||||
|
|
1,116
In-stock
|
Nexperia | MOSFET PMPB13XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.3 A | 13 mOhms | 0.65 V | 24 nC | Enhancement | |||||
|
|
2,895
In-stock
|
Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.3 mOhms | 1.2 V | 24 nC | NexFET | ||||
|
|
2,205
In-stock
|
Toshiba | MOSFET N-Ch 30V 1370pF 24nC 6.3mOhm 43A 19W | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 5.2 mOhms | 1.3 V to 2.3 V | 24 nC | Enhancement | ||||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 27 mOhms | 1.2 V | 24 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 650V 6.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 750 mOhms | 3 V | 24 nC | CoolMOS | ||||
|
|
3,000
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 61 A | 14 mOhms | 24 nC | Enhancement | |||||
|
|
4,900
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 7.5 mOhms | 1 V | 24 nC | Enhancement | OptiMOS |
