- Manufacture :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,348
In-stock
|
Infineon Technologies | MOSFET 55V DUAL N / P CH 20V VGS 55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | Enhancement | ||||
|
|
3,533
In-stock
|
IR / Infineon | MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | Enhancement | ||||
|
|
1,400
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL NCh 55V 4.7A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V | 4.7 A | 56 mOhms | 1 V | 24 nC | ||||
|
|
2,974
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 16.6 A | 7.4 mOhms | 24 nC | Enhancement |
