- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,848
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 8.5 mOhms | 2 V | 16 nC | PowerTrench | |||||
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2,447
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 7.5 A | 17.3 mOhms | 4 V | 16 nC | PowerTrench | |||||
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4,073
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.4 Ohms | 2.1 V | 16 nC | Enhancement | CoolMOS | ||||
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11,481
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 3.5 mOhms | 2 V | 16 nC | Enhancement | OptiMOS | ||||
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5,055
In-stock
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onsemi | MOSFET Single N-Channel 60V,20A,24mohm | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 25 mOhms | 2.5 V | 16 nC | ||||||
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1,306
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.8 mOhms | 1.7 V | 16 nC | PowerTrench SyncFET | |||||
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4,970
In-stock
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onsemi | MOSFET NFET U8FL 30V 41A 8MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37 A | 8.9 mOhms | 1.6 V | 16 nC | ||||||
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13,390
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 16.6 mOhms | 2.6 V | 16 nC | Enhancement | |||||
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10,635
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 9.8 mOhms | 1.8 V | 16 nC | NexFET | |||||
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2,329
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 34A 16nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 34 A | 11 mOhms | 2 V to 4 V | 16 nC | Enhancement | |||||
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750
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET" Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 16.6 mOhms | 2.6 V | 16 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET NCh11.5ohm VGS10V 10uA VDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 30 A | 12.2 mOhms | 2 V to 4 V | 16 nC | Enhancement | ||||||
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VIEW | onsemi | MOSFET NFET 60V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 36 mOhms | 1 V | 16 nC | Enhancement |