- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,370
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 18.5A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24.8 A | 170 mOhms | 2.5 V | 47.2 nC | Enhancement | CoolMOS | |||
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522
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 32.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 350 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | |||
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957
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 18.5A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24.8 A | 170 mOhms | 2.5 V | 47.2 nC | Enhancement | CoolMOS | |||
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445
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 32.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 350 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS |
