- Manufacture :
- Package / Case :
- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 2.8A SOT-223 | TO-261-4, TO-261AA | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | - | 55V | 2.8A (Ta) | 90 mOhm @ 1.4A, 10V | 2V @ 12µA | 10nC @ 10V | 330pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 1.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 150V | 1.9A (Ta) | 280 mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15nC @ 10V | 330pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 1.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N-Channel | - | 150V | 1.9A (Ta) | 280 mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15nC @ 10V | 330pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 1 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) | |||
|
|
|
2,500
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 4.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | STripFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 2500 | N-Channel | Schottky Diode (Isolated) | 30V | 4.5A (Tc) | 55 mOhm @ 2A, 10V | 1V @ 250µA | 4.7nC @ 5V | 330pF @ 25V | 5V, 10V | ±20V | 2W (Tc) | |||
|
|
|
1,296
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
|
|
|
12,000
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 1.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 150V | 1.9A (Ta) | 280 mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15nC @ 10V | 330pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
|
|
22,500
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) |
