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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 150V 1.9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel - 150V 1.9A (Ta) 280 mOhm @ 1.14A, 10V 5.5V @ 250µA 15nC @ 10V 330pF @ 25V 10V ±30V 2.5W (Ta)
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RFQ
Infineon Technologies MOSFET N-CH 150V 1.9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 570 N-Channel - 150V 1.9A (Ta) 280 mOhm @ 1.14A, 10V 5.5V @ 250µA 15nC @ 10V 330pF @ 25V 10V ±30V 2.5W (Ta)
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Per Unit
$0.776
RFQ
2,500
In-stock
STMicroelectronics MOSFET N-CH 30V 4.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) STripFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 2500 N-Channel Schottky Diode (Isolated) 30V 4.5A (Tc) 55 mOhm @ 2A, 10V 1V @ 250µA 4.7nC @ 5V 330pF @ 25V 5V, 10V ±20V 2W (Tc)
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Per Unit
$0.397
RFQ
12,000
In-stock
Infineon Technologies MOSFET N-CH 150V 1.9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 N-Channel - 150V 1.9A (Ta) 280 mOhm @ 1.14A, 10V 5.5V @ 250µA 15nC @ 10V 330pF @ 25V 10V ±30V 2.5W (Ta)
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