- Manufacture :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 0.69 mOhm @ 100A, 10V (1)
- 0.75 mOhm @ 100A, 10V (2)
- 1.2 mOhm @ 100A, 10V (2)
- 1.3 mOhm @ 100A, 10V (2)
- 1.4 mOhm @ 100A, 10V (1)
- 1.4 mOhm @ 195A, 10V (1)
- 1.6 mOhm @ 100A, 10V (1)
- 1.7 mOhm @ 195A, 10V (4)
- 1.9 mOhm @ 100A, 10V (1)
- 1.95 mOhm @ 100A, 10V (1)
- 12.1 mOhm @ 62A, 10V (3)
- 2 mOhm @ 100A, 10V (3)
- 2.1 mOhm @ 168A, 10V (1)
- 2.3 mOhm @ 100A, 10V (2)
- 2.5 mOhm @ 170A, 10V (5)
- 2.6 mOhm @ 100A, 10V (3)
- 2.7 mOhm @ 100A, 10V (1)
- 22 mOhm @ 44A, 10V (3)
- 4.7 mOhm @ 106A, 10V (2)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 10315pF @ 25V (4)
- 11430pF @ 30V (1)
- 12000pF @ 50V (1)
- 12200pF @ 40V (1)
- 12960pF @ 25V (1)
- 13660pF @ 25V (3)
- 13703pF @ 25V (2)
- 13975pF @ 25V (2)
- 14240pF @ 25V (4)
- 15330pF @ 25V (1)
- 15570pF @ 25V (1)
- 15600pF @ 50V (1)
- 16488pF @ 25V (1)
- 16900pF @ 40V (1)
- 5270pF @ 50V (3)
- 5380pF @ 50V (3)
- 8850pF @ 50V (1)
- 8970pF @ 50V (5)
- 9450pF @ 32V (1)
- 9575pF @ 50V (2)
- Drive Voltage (Max Rds On, Min Rds On) :
39 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 343A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 200 | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 200 | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 200 | N-Channel | - | 150V | 195A (Tc) | 12.1 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | 375W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 195A | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262-3 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 1.95 mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | 15330pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 240A D2PAK | TO-262-3 Wide Leads | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262-3 Wide | 0 | 150 | N-Channel | - | 40V | 240A (Tc) | 1.4 mOhm @ 195A, 10V | 4V @ 250µA | 210nC @ 10V | 9450pF @ 32V | 10V | ±20V | 375W (Tc) | ||||
|
55
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N CH 150V 99A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 150V | 99A (Tc) | 12.1 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 99A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 150V | 99A (Tc) | 12.1 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 72A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 200V | 72A (Tc) | 22 mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | - | - | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 195A TO-262 | TO-262-3 Short Leads, I²Pak | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 195A TO262 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | 14240pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 195A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2 mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
473
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 240A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 60V | 240A (Tc) | 2.1 mOhm @ 168A, 10V | 4V @ 250µA | 300nC @ 10V | 8850pF @ 50V | 10V | ±20V | 375W (Tc) | |||||
|
1,062
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 72A D2-PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 72A (Tc) | 22 mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | 10V | ±20V | 375W (Tc) | |||||
|
593
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | |||||
|
165
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A D2-PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | |||||
|
2,448
In-stock
|
Infineon Technologies | MOSFET N CH 60V 240A D2PAK | TO-263-7, D²Pak (6 Leads + Tab) | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 60V | 240A (Tc) | 1.4 mOhm @ 100A, 10V | 3.7V @ 250µA | 354nC @ 10V | 12960pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | |||||
|
335
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D²PAK (TO-263AB) | 0 | 1 | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | |||||
|
9,110
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 257A TO247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
283
In-stock
|
Infineon Technologies | MOSFET NCH 200V 72A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | - | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1 | N-Channel | - | 200V | 72A (Tc) | 22 mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
973
In-stock
|
Infineon Technologies | MOSFET NCH 40V 240A D2PAK | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 240A (Tc) | 0.75 mOhm @ 100A, 10V | 2.4V @ 250µA | 266nC @ 4.5V | 16488pF @ 25V | 4.5V, 10V | ±16V | 375W (Tc) | ||||
|
276
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.3 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | 375W (Tc) | ||||
|
852
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 195A | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 1.9 mOhm @ 100A, 10V | 2.4V @ 250µA | 258nC @ 4.5V | 15570pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | ||||
|
4,040
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 120A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 100V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 270µA | 210nC @ 10V | 15600pF @ 50V | 6V, 10V | ±20V | 375W (Tc) | ||||
|
1,318
In-stock
|
Infineon Technologies | MOSFET N-CH TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 80V | 120A (Tc) | 2 mOhm @ 100A, 10V | 3.8V @ 280µA | 223nC @ 10V | 16900pF @ 40V | 6V, 10V | ±20V | 375W (Tc) | ||||
|
810
In-stock
|
Infineon Technologies | MOSFET NCH 40V 523A D2PAK | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 523A (Tc) | 0.69 mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | 13975pF @ 25V | 10V | ±20V | 375W (Tc) |