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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$6.670
RFQ
1,318
In-stock
Infineon Technologies MOSFET N-CH TO220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 80V 120A (Tc) 2 mOhm @ 100A, 10V 3.8V @ 280µA 223nC @ 10V 16900pF @ 40V 6V, 10V ±20V 375W (Tc)
Default Photo
Per Unit
$5.080
RFQ
4,302
In-stock
Texas instruments MOSFET N-CH 80V TO-220-3 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 1 N-Channel - 80V 100A (Ta) 2.3 mOhm @ 100A, 10V 3.2V @ 250µA 156nC @ 10V 12200pF @ 40V 6V, 10V ±20V 375W (Tc)
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