- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262-3 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 1.95 mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | 15330pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N CH 150V 99A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 150V | 99A (Tc) | 12.1 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 99A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 150V | 99A (Tc) | 12.1 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 72A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 200V | 72A (Tc) | 22 mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | - | - | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 195A TO-262 | TO-262-3 Short Leads, I²Pak | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 195A TO262 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | 14240pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2 mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7 | 0 | 1000 | N-Channel | - | 100V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 3.8V @ 279µA | 210nC @ 10V | 15600pF @ 50V | 6V, 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 120A TO263-3 | TO-263-7, D²Pak (6 Leads + Tab) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7 | 0 | 1000 | N-Channel | - | 80V | 180A (Tc) | 1.5 mOhm @ 100A, 10V | 3.8V @ 279µA | 222nC @ 10V | 16900pF @ 40V | 6V, 10V | ±20V | 375W (Tc) | ||||
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2,000
In-stock
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Infineon Technologies | MOSFET N-CH 80V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 80V | 120A (Tc) | 1.7 mOhm @ 100A, 10V | 3.8V @ 280µA | 223nC @ 10V | 16900pF @ 40V | 6V, 10V | ±20V | 375W (Tc) |