- Series :
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- Operating Temperature :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 250 | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 250 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A D2-PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 250 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 140A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 250 | N-Channel | - | 30V | 140A (Tc) | 6 mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 130A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 250 | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 64A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 250 | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V | 3.1W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 116A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 250 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 1V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 180W (Tc) |
