- Series :
- Operating Temperature :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 250 | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | 200W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 195A D2-PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 250 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 64A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 250 | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V | 3.1W (Ta), 89W (Tc) |