- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.0034 Ohms (1)
- 0.005 Ohms (1)
- 0.0056 Ohms (1)
- 0.0071 Ohms (1)
- 0.0078 Ohms (1)
- 0.0081 Ohms (1)
- 0.013 Ohms (1)
- 0.0155 Ohms (1)
- 0.033 Ohms (1)
- 10.8 mOhms (1)
- 101 mOhms (2)
- 120 mOhms (1)
- 125 mOhms (2)
- 170 mOhms (1)
- 2.5 mOhms (1)
- 2.6 mOhms (2)
- 21 mOhms (3)
- 3.5 mOhms (2)
- 3.7 mOhms (2)
- 300 mOhms (1)
- 36 S (1)
- 37 mOhms (1)
- 4.1 mOhms (1)
- 4.4 mOhms (1)
- 4.7 mOhms (1)
- 41 mOhms (1)
- 5.5 mOhms (2)
- 530 mOhms (1)
- 55 mOhms (1)
- 6.9 mOhms (1)
- 60 mOhms (2)
- 65 mOhms (1)
- 7.9 mOhms (1)
- 9.1 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
43 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
685
In-stock
|
Vishay Semiconductors | MOSFET P Ch -40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.5 mOhms | - 2.5 V | 800 nC | Enhancement | |||||
|
8,850
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.6 mOhms | - 2.2 V | 234 nC | Enhancement | OptiMOS | ||||
|
5,382
In-stock
|
Vishay Semiconductors | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 120 A | 0.0056 Ohms | - 2.5 V | 270 nC | Enhancement | TrenchFET | ||||
|
2,775
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.6 mOhms | - 2.2 V | 234 nC | Enhancement | |||||
|
1,971
In-stock
|
Fairchild Semiconductor | MOSFET P-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 37 mOhms | Enhancement | |||||||
|
1,228
In-stock
|
Fairchild Semiconductor | MOSFET -33.5A,-100V, P-ch | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 33.5 A | 60 mOhms | Enhancement | QFET | ||||||
|
1,856
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | ||||
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 55 mOhms | Enhancement | |||||||
|
800
In-stock
|
Fairchild Semiconductor | MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 22 A | 125 mOhms | Enhancement | QFET | ||||||
|
329
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | |||||||
|
652
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | |||||
|
795
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 0.0034 Ohms | - 2.5 V | 330 nC | Enhancement | TrenchFET | ||||
|
1,103
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.1 mOhms | 125 nC | OptiMOS | ||||||
|
1,686
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 3.7 mOhms | - 4 V | 151 nC | Enhancement | OptiMOS | ||||
|
525
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | |||||
|
734
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 36 S | - 2.5 V | 137 nC | Enhancement | TrenchFET | ||||
|
708
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 0.033 Ohms | - 2.5 V | 134 nC | Enhancement | TrenchFET | ||||
|
800
In-stock
|
Siliconix / Vishay | MOSFET P Ch -100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 93 A | 0.0155 Ohms | - 2.5 V | 350 nC | Enhancement | |||||
|
970
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.7 mOhms | 100 nC | OptiMOS | ||||||
|
386
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 8 A | 530 mOhms | Enhancement | |||||||
|
798
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 22 A | 125 mOhms | Enhancement | |||||||
|
35,730
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 33.5 A | 60 mOhms | Enhancement | |||||||
|
624
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 3.5 mOhms | 158 nC | OptiMOS | ||||||
|
VIEW | Infineon Technologies | MOSFET P-Ch -30V -45A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 45 A | 10.8 mOhms | 42 nC | OptiMOS | ||||||
|
1,011
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 8.8A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 300 mOhms | Enhancement | SIPMOS | ||||||
|
1,000
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 18.6A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.7 A | 101 mOhms | - 4 V | - 28 nC | Enhancement | SIPMOS | ||||
|
280
In-stock
|
Siliconix / Vishay | MOSFET P Ch -100Vds 20Vgs | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 120 A | 0.0081 Ohms | - 2.5 V | 190 nC | Enhancement | |||||
|
959
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.4 mOhms | 135 nC | OptiMOS | ||||||
|
266
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 7.9 mOhms | 71 nC | OptiMOS | ||||||
|
794
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 18.6A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.7 A | 101 mOhms | - 4 V | - 28 nC | Enhancement |