- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,856
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | ||||
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652
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | |||||
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1,103
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.1 mOhms | 125 nC | OptiMOS | ||||||
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1,686
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 3.7 mOhms | - 4 V | 151 nC | Enhancement | OptiMOS | ||||
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970
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.7 mOhms | 100 nC | OptiMOS | ||||||
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959
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.4 mOhms | 135 nC | OptiMOS | ||||||
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266
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 7.9 mOhms | 71 nC | OptiMOS | ||||||
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975
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement | OptiMOS | ||||
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1,876
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 6.9 mOhms | 63 nC | OptiMOS | ||||||
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VIEW | Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 3.7 mOhms | - 4 V | 151 nC | Enhancement |