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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Gain
BLA6G1011-200R,112
20+
$260.810
40+
$257.160
VIEW
RFQ
NXP Semiconductors RF MOSFET Transistors TRANS PWR LDMOS 200W SMD/SMT SOT-502A-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
BLA6G1011LS-200RG,
20+
$260.810
40+
$257.160
VIEW
RFQ
NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR SMD/SMT SOT-502C-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
BLA1011S-200R,112
60+
$334.080
VIEW
RFQ
NXP Semiconductors RF MOSFET Transistors TRANS LDMOS NCH 75V SMD/SMT SOT-502B-3 + 150 C Tube 200 W Si N-Channel 75 V 150 mA 60 mOhms 13 dB
BLA6G1011L-200RG,1
20+
$260.810
40+
$257.160
VIEW
RFQ
NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR SMD/SMT SOT-502D-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
BLA1011-200R,112
60+
$334.080
VIEW
RFQ
NXP Semiconductors RF MOSFET Transistors TRANS LDMOS NCH 75V SMD/SMT SOT-502A-3 + 150 C Tube 200 W Si N-Channel 75 V 150 mA 60 mOhms 13 dB
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